Silicon in AlN: shallow donorand DX behaviors
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چکیده
منابع مشابه
DX-center formation in wurtzite and zinc-blende AlxGa12xN
The transition from shallow to deep centers as a function of pressure or alloying is investigated for oxygen and silicon donors in GaN and AlN, based on first-principles total-energy calculations. The stability of the localized deep state (DX center! is found to depend on interactions between the impurity and third-nearestneighbor atoms, which occur in different positions in the zinc-blende and...
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In this work, aluminum nitride (AlN) thin films with different thicknesses were deposited on quartz and silicon substrates using single ion beam sputtering technique. The physical and chemical properties of prepared films were investigated by different characterization technique. X-ray diffraction (XRD) spectra revealed that all of the deposited films have an amorphous str...
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We demonstrate that x-ray irradiation can be used to induce an insulator–metal transition in Si-doped Al0.35Ga0.65As, a semiconductor with DX centers. The excitation mechanism of the DX centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident x-ray energy exhibits an edge both at the Ga and As K ...
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Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...
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Nitride-based device structures for electronic and optoelectronic applications usually incorporate layers of AlxGa1-xN, and nand p-type doping of these alloys is typically required. Experimental results indicate that doping efficiencies in AlxGa1-xN are lower than in GaN. We address the cause of these doping difficulties, based on results from first-principles densityfunctional-pseudopotential ...
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تاریخ انتشار 2012